2SC2274 0.5 a , 60 v npn plastic encapsulated transistor elektronische bauelemente 21-feb-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high breakdown voltage ? high current ? low saturation voltage classification of h fe(1) product-rank 2SC2274-d 2SC2274-e 2SC2274-f range 60~120 100~200 160~320 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5 v collector current - continuous i c 0.5 a collector power dissipation p c 600 mw thermal resistance from junction to ambient r ja 208 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 60 - - v i c =0.01ma, i e =0 collector to emitter breakdown voltage v (br)ceo 50 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =0.01ma, i c =0 collector cut ? off current i cbo - - 1 a v cb =40v, i e =0 emitter cut ? off current i ebo - - 1 a v eb =4v, i c =0 dc current gain h fe(1) 60 - 320 v ce =5v, i c =50ma h fe(2) * 35 - - v ce =5v, i c =400ma collector to emitter saturation voltage v ce(sat) - - 0.6 v i c =400ma, i b =40ma base to emitter voltage v be(sat) - - 1.2 v i c =400ma, i b =40ma transition frequency f t - 120 - mhz v ce =10v, i c =10ma collector output capacitance c ob - 5 - pf v cb =10v, f=1mhz ? emitte r ? collector ? base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
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